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IXKP 20N60C5M
CoolMOS ? 1) Power MOSFET
Fully isolated package
N-Channel Enhancement Mode
I D25 = 7.6 A
V DSS = 600 V
R DS(on) max = 0.2 Ω
Low R DSon , High V DSS MOSFET
Ultra low gate charge
D
TO-220 FP
G
Preliminary data
MOSFET
G
S
Features
D
S
Symbol
V DSS
Conditions
T VJ = 25°C
Maximum Ratings
600 V
? fast CoolMOS ? 1) power MOSFET
4 th generation
- High blocking capability
V GS
± 20
V
- Lowest resistance
I D25
I D90
T C = 25°C
T C = 90°C
7.6
5.3
A
A
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
E AS
E AR
single pulse
repetitive
I D = 6.6 A; T C = 25°C
435
0.66
mJ
mJ
due to reduced chip thickness
? Enhanced total power density
dV/dt
MOSFET dV/dt ruggedness V DS = 0...480 V
50
V/ns
Applications
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise speci?ed)
? Switched mode power supplies
(SMPS)
? Uninterruptible power supplies (UPS)
min.
typ.
max.
? Power factor correction (PFC)
? Welding
R DSon
V GS = 10 V; I D = 10 A
180
200
m Ω
? Inductive heating
V GS(th)
I DSS
V DS = V GS ; I D = 1.1 mA
V DS = 600 V; V GS = 0 V
T VJ = 25°C
2.5
3
3.5
1
V
μA
? PDP and LCD adapter
I GSS
V GS = ± 20 V; V DS = 0 V
T VJ = 125°C
10
100
μA
nA
1)
CoolMOS ? is a trademark of
In?neon Technologies AG.
C iss
C oss
V GS = 0 V; V DS = 100 V
f = 1 MHz
1520
72
pF
pF
Q g
32
30
nC
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 0 to 10 V; V DS = 400 V; I D = 10 A
V GS = 10 V; V DS = 400 V
I D = 10 A; R G = 3.3 Ω
8
11
10
5
50
5
3.75
nC
nC
ns
ns
ns
ns
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2009 IXYS All rights reserved
20090209d
1-4
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